Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-09-26

1991-05-14

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

050162527

ABSTRACT:
A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.

REFERENCES:
patent: 4581742 (1986-04-01), Botez
Isao Hino et al, MOCVD Growth of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P and Double Heterostructures for Visible Light Lasers, Journal of Crystal Growth 68, Jan. (1984), pp. 483-489.
Tohru Suzuki et al, Band-Gap Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy, Japanese Journal of Applied Physics, vol. 27, No. 11, Nov. 1988, pp. 2098-2106.
S. Kawata et al, Room-Temperature, Continuous-Wave Operation for Mode-Stabilized AlGaInP Visible-Light Semiconductor Laser with a . . . , Electronics Letters 24, Nov. 1988, vol. 24, No. 24, pp. 1489-1490.
Kenichi Kobayashi et al, AlGaInP Double Heterostructure Visible-Light Laser Diodes with a GaInP . . . , IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 704-711.
J. V. Dilorenzo, Vapor Growth of Eitaxial GaAs: A Summary of Parameters which Influence the Purity . . . , Journal of Crystal Growth 17 (1972), Jan., pp. 189-206.
M. Wada et al, Monolithic High-Power Dual-Wavelength GaAlAs Laser Array, Appl. Phys. Lett., vol. 43, No. 10, Nov. 15, 1983, pp. 903-905.

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