Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1986-09-09

1989-02-21

Davie, James W.

Coherent light generators

Particular beam control device

Mode discrimination

372 32, 372 49, H01S 319

Patent

active

048072354

ABSTRACT:
A semiconductor laser device comprising a multi-layered semiconductor crystal containing an active region for laser oscillation, wherein the extended portions of said active region which are adjacent to both sides of one facet having the width of a selected value of said device constitute light-absorbing regions by which light in a high-order transverse mode is absorbed to a greater extent than that in a fundamental transverse mode, thereby achieving laser oscillation in a stable fundamental transverse mode up to a high output power.

REFERENCES:
Iga et al., "GaInAsP/InP DH Lasers With a Chemically Etched Facet", IEEE Journal of Quantum Electronics, vol. QE-16, No. 10, Oct. 1980, pp. 1044-1047.
J. Berger et al., Appl. Phys. Lett., (5/85), 46:806-808.
R. R. Craig et al., Electron. Lett., (2/85), 21:62-63.
S. Adachi et al., J. Appl. Phys., (9/81), 52:5843-5845.
Y. L. Bessonov et al., Sov. J. Quant. Elect., (2/79), 9:243-245.

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