Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1997-12-01

1999-09-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 49, H01S 319, H01S 3096

Patent

active

059533587

ABSTRACT:
A semiconductor laser has a laser active layer for receiving current from a pair of electrode for lasing operation. The end region in the vicinity of both the facets of the active layer does not receive current from the electrode. The interfaces between the end portions and the central portion receiving current are slanted from the plane normal to the optical axis of the laser, for stable mode operation of the laser device.

REFERENCES:
patent: 4722088 (1988-01-01), Wolf
patent: 4815084 (1989-03-01), Scifres et al.
patent: 5665985 (1997-09-01), Iawta
Hamada H et al: "Wide-Stripe AlGaiNP Laser Diodes with Current-Blocking Region Near Facets Grown on Misoriented Substrates" Electronics Letters, vol. 27 No. 19, Sep. 12, 1991, pp. 1713-1715.
Sagawa M et al: "High Power COD-Free Operation of 0.098 M InGaAs/GaAs/InGaP Lasers with Non-Injection Near the Facets" Electronics Letters, vol. 30, No. 17, Aug. 18, 1994, p. 1410/1411.

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