Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1987-05-29

1989-02-28

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 45, H01S 319

Patent

active

048092894

ABSTRACT:
A semiconductor laser device comprises a semi-insulating substrate and at least two kinds of the thin compound semiconductor layers having different width of band gap, which are alternately superimposed on the seim-insulating substrate to form a multiquantum well layer, wherein disordered regions are formed in the multiquantum well layer except for a stripe region having a narrow width at its intermediate portion by selectively diffusing two kinds of impurities having different conductive properties from both sides of the multiquantum well layer until the impurities reach the semi-insulating substrate.

REFERENCES:
Applied Phys. Lett., vol. 47, No. 12, (Dec. 5, 1985), "Low Threshold Planar Buried Heterostructure Lasers Fabricated by Impurity-Induced Disordering", by R. L. Thornton et al.
Applied Phys. Lett., vol. 45, No. 1, (Jul. 1, 1984), "GaAlAs Buried Multi-Quantum Well Lasers Fabricated by Diffusion-Induced Disordering", by Tadashi Fukuzawa et al.

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