Semiconductor laser CRT

Details Semiconductor laser CRT Semiconductor laser CRT

1982-12-27

1985-09-03

Davis, James W.

Coherent light generators

Particular active media

Semiconductor

313463, 313474, 372 74, H01S 319

Patent

active

045396876

ABSTRACT:
Room temperature laser action is achieved in a cathode ray tube (CRT) in which the target includes a plurality of semiconductor layers: a thin, wide bandgap buffer layer; a thicker, narrow bandgap active layer; and a much thicker wide bandgap cavity-length-adjusting layer. The light beam direction is essentially parallel to the e-beam direction and hence is scannable.

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patent: 3836224 (1974-09-01), Strehlow et al.
patent: 3864645 (1975-02-01), Packard et al.
Bogdankevich et al., "Multilayer GaAs-AlAs Heterostructure Laser Pumped Transversely by an Electron Beam", Sov. J. Quantum Electron. 10 (6), Jun. 1980, pp. 693-695.
Nasibov et al., "Electron-Beam Tube with a Laser Screen", Sov. J. Quant. Electron., vol. 4, No. 3, Sep. 1974, pp. 296-300.
Kozlovskii et al., "Formation of a Television Image with the Aid of a Laser Electron-Beam Tube under Line Scanning Conditions", Sov. J. Quant. Electron., vol. 5, No. 7, pp. 865-866 (1975).
Bogdankevich et al., "Influence of Doping of Ga.sub.0.68 Al.sub.0.32 As on its Cathodoluminescence and Threshold Current Density of a Laser Pumped by an Elctron Beam", Sov. J. Quant. Electron., 11 (1), Jan. 1981, pp. 119-121.
Basov et al., "Negative Absorption Coefficient at Indirect Transitions in Semiconductors," Advances in Quantum Electronics, Columbia University Press, pp. 496-506 (1961).
D. A. Cusano, "Radiative Recombination from GaAs Directly Excited by Electron Beams," Solid State Comm., vol. 2, pp. 353-358 (1964).
Hurwitz et al., "Electron-Beam-Pumped GaAs Laser," Applied Physics Letters, vol. 5, No. 7, pp. 139-141 (1964).

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