Semiconductor laser chip having a layer structure to reduce the

Details Semiconductor laser chip having a layer structure to reduce the Semiconductor laser chip having a layer structure to reduce the

1985-03-15

1988-03-15

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 56, H01S 319

Patent

active

047317906

ABSTRACT:
A semiconductor laser chip having a buried heterostructure comprising a semiconductor substrate and a light emitting portion wherein the active layer and buried layers of the light emitting portion are disposed to be on only a portion of the semiconductor substrate. By virtue of this arrangement, the probability of occurrence of V.sub.TH effects can be reduced. Also, the occurrence of the junction short-circuits resulting from an overhanging electrode or from deposition of foreign matter can be reduced.

REFERENCES:
patent: 4210878 (1980-07-01), Yonezu
patent: 4349905 (1982-09-01), Ackley
patent: 4426700 (1984-01-01), Hirao et al.
patent: 4525841 (1985-06-01), Kitamura et al.

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