Semiconductor laser beam scanner

Details Semiconductor laser beam scanner Semiconductor laser beam scanner

1981-12-03

1984-10-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 50, 372 24, H01S 319

Patent

active

044752008

ABSTRACT:
A heterojunction-type laser is constructed with two closely spaced p-n junctions. Ohmic contacts are provided on both sides of the p-n junctions so that the voltages across the junctions can be individually controlled. By controlling the ratio of the voltages, the carrier distribution in the lasing active layer is controlled. This in turn controls the direction of the output beam of the laser in accordance with the ratio of the voltages, providing a laser beam which can be scanned without requiring mechanical means.

REFERENCES:
patent: 4212020 (1980-07-01), Yariv et al.
patent: 4217561 (1980-08-01), Scifres et al.

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