Semiconductor laser apparatus having an external reflecting mean

Details Semiconductor laser apparatus having an external reflecting mean Semiconductor laser apparatus having an external reflecting mean

1986-06-13

1989-02-07

Davie, James W.

Coherent light generators

Particular resonant cavity

357 19, 372 29, 372 49, H01S 319

Patent

active

048036951

ABSTRACT:
A semiconductor laser apparatus comprising a semiconductor laser device and a semiconductor device, both of which are fixed on a single mounting base with a spacing of several mm or less therebetween in such a manner that one of the side faces of said semiconductor device faces a laser-emitting facet of said semiconductor laser device in a parallel manner, the side face of said semiconductor device being a facet, at least a part of which is coated with a reflecting dielectric film functioning so as to have laser light from said semiconductor laser device return to said semiconductor laser device therefrom.

REFERENCES:
patent: 4338577 (1982-07-01), Sato et al.
patent: 4675873 (1987-06-01), Miller
Patent Abstracts of Japan, vol. 3, No. 36 (E-100), 27th Mar. 1979; & JP-A-54 14 180 (Canon K.K.) 02-02-1979.
Patent Abstracts of Japan, vol. 7, No. 218 (E-200) (1363), 28th Sep. 1983; & JP-A-58 111 391 (Hitachi Seisakusho K.K.) 02-07-1983.
Electronics Letters (21 Jul. 1983) vol. 19, No. 15, pp. 561-562.
IOOC 83 (4th) 1983.6.27-30, Tokyo, Japan, pp. 26-27.

Affiliated with

Also associated with

Rating

Semiconductor laser apparatus having an external reflecting mean does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser apparatus having an external reflecting mean, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser apparatus having an external reflecting mean will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1089540