Semiconductor laser apparatus and method of observing...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S046012, C372S045013, C372S044010

Reexamination Certificate

active

06870869

ABSTRACT:
A semiconductor laser apparatus comprises a semiconductor laser chip disposed on a base through an electrode area, wherein the electrode area comprises at least a first electrode layer having no opening and a second electrode layer having an opening from the semiconductor laser chip side, the second electrode layer is formed of materials different from those of the first electrode layer and the opening of the second electrode layer is shaped in such a manner as to allow observation of a light emitting portion of the semiconductor laser chip by etching the first electrode layer using the second electrode layer as a mask. Another semiconductor laser apparatus comprises first and second electrode areas on the upper surface and the lower surface of the semiconductor laser chip, wherein both the first and the second electrode areas comprise at least the first electrode layer having no opening and the second electrode layer having the opening from the semiconductor laser chip side.

REFERENCES:
patent: 4747110 (1988-05-01), Takahashi et al.
patent: 4755036 (1988-07-01), Suzuki et al.
patent: 4894835 (1990-01-01), Uomi et al.
patent: 6236066 (2001-05-01), Shiba
patent: 6291258 (2001-09-01), Kadota

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