Semiconductor laser apparatus and manufacturing method thereof

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S050100, C372S038020, C372S038090, C438S091000, C438S237000, C438S380000, C438S979000, C438S983000

Reexamination Certificate

active

07995636

ABSTRACT:
A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.

REFERENCES:
patent: 5115441 (1992-05-01), Kopf et al.
patent: 5990499 (1999-11-01), Kuhlmann et al.
patent: 6054716 (2000-04-01), Sonobe et al.
patent: 6185240 (2001-02-01), Jiang et al.
patent: 6407413 (2002-06-01), Kawamoto
patent: 6468821 (2002-10-01), Maeda et al.
patent: 6593597 (2003-07-01), Sheu
patent: 6696704 (2004-02-01), Maeda et al.
patent: 6936855 (2005-08-01), Harrah
patent: 6989572 (2006-01-01), Stefanov et al.
patent: 7227190 (2007-06-01), Yasukawa et al.
patent: 7408967 (2008-08-01), Collins et al.
patent: 7440865 (2008-10-01), Hofmeister et al.
patent: 7483464 (2009-01-01), Kuwata et al.
patent: 7496123 (2009-02-01), Ueki et al.
patent: 7508047 (2009-03-01), Tatum et al.
patent: 2003/0098460 (2003-05-01), Yasukawa et al.
patent: 2003/0189201 (2003-10-01), Chen
patent: 2003/0214233 (2003-11-01), Takahashi et al.
patent: 2005/0247950 (2005-11-01), Nakamura et al.
patent: 2006/0049411 (2006-03-01), Nakamura et al.
patent: 53-102383 (1977-01-01), None
patent: 59-178784 (1984-10-01), None
patent: 11-112026 (1999-04-01), None
patent: 11-507182 (1999-06-01), None
patent: 11-298041 (1999-10-01), None
patent: 2003-110152 (2003-04-01), None
patent: 2004-128524 (2004-04-01), None
patent: 2005311089 (2004-04-01), None
patent: 2005353647 (2005-12-01), None
patent: WO 0122495 (2001-03-01), None
WO 01/22495 translation, pp. 1-10.
Bobby M. Hawkings, et al. “Reliability of Various Size Oxide Aperture VCSELs.”Honeywell International, 2000.

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