Semiconductor laser apparatus

Details Semiconductor laser apparatus Semiconductor laser apparatus

2007-08-17

2009-10-27

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular resonant cavity

Specified cavity component

C372S043010, C372S050124, C372S081000, C372S108000

Reexamination Certificate

active

07609745

ABSTRACT:
A novel semiconductor laser device is provided which can suppress internal optical absorption even when In is used as a material for a semiconductor multilayer mirror containing a nitride. The semiconductor laser device has two mirrors disposed to face each other, and an active layer disposed therebetween. At least one of the mirrors is a multilayer mirror having first nitride semiconductor layers containing Ga and second nitride semiconductor layers containing Al, which are alternately laminated to each other. The second nitride semiconductor layer contains In and includes a first region having a refractive index lower than that of the first nitride semiconductor layer, and a second region having a refractive index lower than that of the first nitride semiconductor layer and an In concentration lower than that of the first region. The second region is disposed closer to the active layer than the first region.

REFERENCES:
patent: 2002/0176474 (2002-11-01), Huang et al.
patent: 2005/0087753 (2005-04-01), D'Evelyn et al.
patent: 2007/0003697 (2007-01-01), Carlin et al.
patent: 2007/0131950 (2007-06-01), Takeuchi
patent: 7-297476 (1995-11-01), None
Carlin, J.-F. et al., “Lattice-matched AllnN/GaN Distributed Bragg Reflectors for Nitride Microcavities”,http://www.ioffe.rssi.ru/PLMCN4/abstracts/W4—1.pdf, 4thInternational Conference on Physics of Light-matter Coupling in Nanostructures (St. Petersburg, Russia) Jun. 29-Jul. 3, 2004.
Carlin, J.-F. et al., “Crack-free Fully Epitaxial Nitride Microcavity Using Highly Reflective AllnN/GaN Bragg Mirrors”, Appl. Phys. Letters, 86 (031107), 2005, pp. 031107-1 to 031107-3.

Affiliated with

Also associated with

Rating

Semiconductor laser apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4129592