Semiconductor laser apparatus

Details Semiconductor laser apparatus Semiconductor laser apparatus

1990-03-29

1991-03-05

Scott, Jr., Leon

Coherent light generators

Particular beam control device

Optical output stabilization

372 92, 372 38, 372 34, 372 43, H01S 313

Patent

active

049982567

ABSTRACT:
In a semiconductor laser apparatus of the invention, a laser beam emitted from a semiconductor laser is collimated by an optical leans, and is subsequently split by a beam splitter in two directions. One split laser beam component is focused on a first photodetector through an optical lens. The other laser beam component is incident on a Fabry-Perot resonator, and is changed in intensity thereby. The laser beam component is then focused on a photodetector through an optical lens. The Fabry-Perot resonator is integrally designed such that dielectric multilayer films are respectively deposited on both the end faces of a crystalized quartz bulk, which is shaped into a columnar shape extending in the C-axis direction, so as to form a pair of reflect filters. Since the bulk is made of crystalized quartz it is not easily influenced by changes in temperature.

REFERENCES:
patent: 4821273 (1989-04-01), Hori
patent: 4907237 (1990-03-01), Dahmani et al.
patent: 4918700 (1990-04-01), Gambini
A. D. White, "Frequency Stabilization of Gas Lasers", IEEE J. Quant, Elect., QE-1, pp. 349-357 (1965).
T. Uchida, "Direct Modulation of Gas Lasers", IEEE J. Quant. Elect., QE-1, pp. 336-343 (1965).

Affiliated with

Also associated with

Rating

Semiconductor laser apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-501952