Semiconductor laser and the method for manufacturing the same

Details Semiconductor laser and the method for manufacturing the same Semiconductor laser and the method for manufacturing the same

2006-01-04

2008-12-02

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050100

Reexamination Certificate

active

07460575

ABSTRACT:
The present invention is to provide a semiconductor laser with a feedback grating comprised of InP and AlGaInAs without InAsP put therebetween, and to provide a method for manufacturing the DFB-LD having such grating. The LD includes an n-type InP substrate, an AlInAsP intermediate layer, an AlGaInAs lower SCH layer, an active layer, and a p-type layer for upper cladding in this order from the InP substrate. The InP substrate, the AlInAsP intermediate layer, and the AlGaInAs lower SCH layer constitute the feedback grating. The AlInAsP intermediate layer lowers a series resistance along these semiconductor stacks.

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patent: 5841152 (1998-11-01), Ishikawa
patent: 6625189 (2003-09-01), Kito et al.
patent: 2005/0286582 (2005-12-01), Hayakawa et al.
patent: 11-112098 (1999-04-01), None

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