Semiconductor laser and process for production thereof

Details Semiconductor laser and process for production thereof Semiconductor laser and process for production thereof

1997-07-22

1999-11-09

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, 372 26, 372 96, 438 33, H01S 319

Patent

active

059827980

ABSTRACT:
In a semiconductor laser for analog modulation, intermodulation distortion at high temperatures and/or at high outputs is reduced. In a DC-PBH semiconductor laser, the width (Wm) of the electrode mesa 11 is set at 10 .mu.m or less, and the width of each recombination layer 2 is set at 0.1 .mu.m or more. Further, the distance between one end of the active layer 1 and one end of each current-blocking layer 5 is set at 0.01 .mu.m to 0.5 .mu.m.

REFERENCES:
patent: 4597085 (1986-06-01), Mito et al.
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patent: 5390205 (1995-02-01), Mori et al.
patent: 5452315 (1995-09-01), Kimura et al.
patent: 5780320 (1998-07-01), Kinoshita
Haruo Yonetani, et al. "DFB Laser Diode and Module for Analog Application", Fujitsu Science Technical Journal, vol. 29, Dec. 1993, pp. 377-389.
"Double-Channel Planar Buried-Heterostructure Laser Diode with Effective Current Confinement", Electronics Letters, vol. 18, Oct. 28, 1982, pp. 953-954.

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