Semiconductor laser and method of producing the same

Details Semiconductor laser and method of producing the same Semiconductor laser and method of producing the same

2006-10-03

2006-10-03

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050121

Reexamination Certificate

active

07116692

ABSTRACT:
A semiconductor laser device having a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, a current blocking layer provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. A current interrupting layer or layers formed of an insulating material are provided between the upper second cladding layer and the contact layer, in the vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in the longitudinal direction of the upper second cladding layer.

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patent: 6444485 (2002-09-01), Kidoguchi et al.
patent: 2000-22262 (2000-01-01), None

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