Semiconductor laser and method of manufacturing the same

Details Semiconductor laser and method of manufacturing the same Semiconductor laser and method of manufacturing the same

2005-04-05

2005-04-05

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S044010, C372S096000

Reexamination Certificate

active

06876688

ABSTRACT:
A semiconductor laser has an active region which includes at least a quantum well layer and upper and lower optical waveguide layers and is of InxGa1−xAsyP1−y(0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers are formed on opposite sides of the active region. At least one of the optical waveguide layers is not smaller than 0.25 μm in thickness, and a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer.

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