Semiconductor laser and method of manufacturing the same

Details Semiconductor laser and method of manufacturing the same Semiconductor laser and method of manufacturing the same

1997-03-11

1999-10-26

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

059740671

ABSTRACT:
A semiconductor laser has a first conduction type clad layer, an active layer and a second conduction type clad layer formed on a first conduction type semiconductor substrate in this order. An inverted mesa-shaped ridge is formed on a part of the second conduction type clad layer and a first conduction type current stopping layer is formed on each side of the ridge. Each side of the inverted mesa-shaped ridge is curved into a concave surface in a plane perpendicular to the longitudinal direction of the ridge.

REFERENCES:
patent: 5426658 (1995-06-01), Kaneno et al.
patent: 5470786 (1995-11-01), Irikawa et al.
patent: 5701322 (1997-12-01), Nagai
patent: 5706304 (1998-01-01), Ohkura

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