Semiconductor laser and method of manufacturing semiconductor la

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

372 45, H01S 319

Patent

active

053793145

ABSTRACT:
A light emitting element comprises a substrate having a {100} crystal face having a ridge extending in a <001> crystal axis direction, a first cladding layer formed on the ridge, an active layer formed on the first cladding layer, a second cladding layer formed on the active layer, a first electrode being electrically connected to the substrate, and a second electrode being electrically connected to the second cladding layer.

REFERENCES:
patent: 4737961 (1988-04-01), Mori et al.
patent: 4932033 (1990-06-01), Miyazawa et al.
patent: 4946802 (1990-08-01), Shima et al.
patent: 5093278 (1992-03-01), Kamei
patent: 5111469 (1992-05-01), Narui et al.
patent: 5255280 (1993-10-01), Harui et al.
patent: 5280493 (1994-01-01), Takiguchi et al.
patent: 5291033 (1994-03-01), Morishima

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor laser and method of manufacturing semiconductor la does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser and method of manufacturing semiconductor la, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser and method of manufacturing semiconductor la will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2216881

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.