Semiconductor laser and method of manufacturing same

Details Semiconductor laser and method of manufacturing same Semiconductor laser and method of manufacturing same

1993-10-14

1997-04-15

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, 372 48, 438 33, 438 42, 438964, H01S 319

Patent

active

056217463

ABSTRACT:
A semiconductor laser such as a laser diode includes a semiconductor substrate and a laser diode region disposed on said semiconductor substrate and having a laser beam emission end. The semiconductor substrate has a front surface directly below said laser beam emission end, said front surface being retracted from said laser beam emission end. The front surface may be formed as an optically roughened surface as a side wall surface of a groove when the groove is defined in the semiconductor substrate by dicing. The laser diode region includes an active layer of GaAs or AlGaAs. The front surface may further be optically roughened by etching or sputtering.

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