Semiconductor laser and method of making the same

Details Semiconductor laser and method of making the same Semiconductor laser and method of making the same

2011-05-24

2011-05-24

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S022000, C438S040000, C372S045010, C257SE21002

Reexamination Certificate

active

07947520

ABSTRACT:
In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive material is formed to bury the ridge structure. A cured resin portion and an uncured resin portion are formed in the resin layer by performing lithographic exposure of the resin layer, and the uncured resin portion is on the top of the ridge structure. The uncured resin portion is removed to form a dent which is provided on the top of the ridge structure. An overall surface of the cured resin portion and dent is etched to form an etched resin layer. An opening is formed in the etched resin layer by thinning the cured resin portion, and a part of the insulating film is exposed in the opening of the etched resin layer. The part of the insulating film is etched using the etched resin layer as a mask to form an opening in the insulating film. An electrode is formed over the ridge structure and the etched resin layer.

REFERENCES:
patent: 6914009 (2005-07-01), Lill et al.
patent: 6989550 (2006-01-01), Nakahara et al.
patent: 2004/0099859 (2004-05-01), Nakahara et al.
patent: 2004/0175655 (2004-09-01), Toyoda et al.
patent: 2006/0056473 (2006-03-01), Tanigawa et al.
patent: 2004-179274 (2004-06-01), None

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