Semiconductor laser and method of making the same

Details Semiconductor laser and method of making the same Semiconductor laser and method of making the same

1997-09-05

2000-05-23

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, 438 29, 438 45, H01S 319, H01L 2120

Patent

active

060673109

ABSTRACT:
In the present method, at the time when a semiconductor laser is being made, nitrogen or phosphorus element is introduced into an active layer comprising a GaAs based compound from an end face thereof, thereby changing the region of the active layer in the vicinity of the end face into a GaN or GaP based compound. Accordingly, the energy band gap of this region is made wider than the energy band gap within the active layer, and thus substituted region is changed into a layer transparent to the laser light generated within the active layer. Thus, the end face can be prevented from deteriorating upon the temperature rise caused by laser light absorption at the end face.

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