Semiconductor laser and method of fabricating semiconductor lase

Details Semiconductor laser and method of fabricating semiconductor lase Semiconductor laser and method of fabricating semiconductor lase

1998-02-09

2000-01-25

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

060185392

ABSTRACT:
A semiconductor laser includes a first conductivity type semiconductor substrate having a gain region and a spot size changing region adjacent each other; a first conductivity type lower cladding layer disposed on the substrate; an active layer disposed on the lower cladding layer and having a thickness which is uniform in the gain region and gradually decreases in the spot size changing region with distance from the gain region; a second conductivity type upper cladding layer disposed on the active layer and having a stripe-shaped ridge, the ridge extending along the gain region and the spot size changing region; a first electrode disposed on the ridge of the upper cladding layer; and a second electrode disposed on a rear surface of the substrate. Current flow is concentrated in the ridge of the upper cladding layer. Further, when the ridge is fabricated, portions of the active layer in which a current will be injected during operation of the laser are not exposed to the atmosphere and not oxidized, resulting in a highly reliable semiconductor laser with an integrated spot size changing part and gain part.

REFERENCES:
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patent: 5684818 (1997-11-01), Anayama et al.
patent: 5703974 (1997-12-01), Sasaki et al.
patent: 5799027 (1998-08-01), Anayama et al.
Lammert et al.; "Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers with nonabsorbing mirrors by selective-area MOCVD", Electronics Letters, Jun. 22, 1995, vol. 31, No. 13, pp. 1070-1072.

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