Semiconductor laser and method for production thereof

Details Semiconductor laser and method for production thereof Semiconductor laser and method for production thereof

1989-03-09

1990-01-16

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

048948349

ABSTRACT:
A distributed feedback semiconductor laser which achieves a phase shift for stabilizing the longitudinal mode without a substantial increase in reactive current and without introducing dimensional discontinuities in the laser stripe. The active layer of the laser is configured as a multi-quantum well and impurities are selectively diffused into the multi-quantum well to disorder a selected portion of the active layer. The disordered portion has an optical propagation constant which is different than that of the remaining stripe, and the difference in propagation constant coordinated with the length of the phase adjustment section produces a phase shift adequate to stabilize the laser longitudinal mode.

REFERENCES:
patent: 4680768 (1987-07-01), Yagi
"GaInAsP/InP Phase-Adjusted Distributed Feedback Lasers With a Step-Like Nonuniform Stripe Width Structure" by Soda et al., Electronics Letters, Nov. 22nd, 1984, vol. 20, pp. 1016-1018.

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