Semiconductor laser and method for producing the same

Details Semiconductor laser and method for producing the same Semiconductor laser and method for producing the same

1996-07-19

1999-09-07

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

059498080

ABSTRACT:
A semiconductor laser includes a substrate of a first conductive type, a mesa provided on the substrate and having a multilayered structure including at least a cladding layer of the first conductive type, an active layer and another cladding layer of a second conductive type, a current blocking layer provided on both sides of the mesa, a buried layer of the second conductive type provided on the mesa and the current blocking layer, and a contact layer of the second conductive type provided in a predetermined region on the buried layer. The predetermined region does not include a portion immediately above the mesa.

REFERENCES:
patent: 4161701 (1979-07-01), Takeda et al.
patent: 4542512 (1985-09-01), Van Den Beemt
patent: 5105432 (1992-04-01), Murakami et al.
patent: 5107514 (1992-04-01), Goto
patent: 5245622 (1993-09-01), Jewell et al.
patent: 5422901 (1995-06-01), Lebby et al.
patent: 5729561 (1998-03-01), Hironaka
Copy of Office Action dated Sep. 3, 1998 from corresponding Japanese Application No. 8-186466 (with English translation).

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