Semiconductor laser and method for manufacturing the same

Details Semiconductor laser and method for manufacturing the same Semiconductor laser and method for manufacturing the same

2006-08-22

2006-08-22

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S098000, C257S099000, C257S100000, C257S101000, C372S045010, C372S046010

Reexamination Certificate

active

07095057

ABSTRACT:
Provided is a semiconductor laser including a substrate etched into a mesa structure, an active layer, clad layers, a current blocking layer, an etch-stop, an ohmic contact layer, and electrodes, and a method for manufacturing the same, whereby it is possible to improve a ratio of light output to input current by blocking a leakage current flowing outside an active waveguide in a BH laser.

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patent: 05-167191 (1993-07-01), None
patent: 10-1998-031975 (1998-07-01), None
G. Pakulski, et al.; “Semi-insulating buried heterostructure laser with PN fence”; Electronics Letters; vol. 38, No. 25; Dec. 5, 2002; pp. 1680-1682.

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