Semiconductor laser and method for manufacturing the same

Details Semiconductor laser and method for manufacturing the same Semiconductor laser and method for manufacturing the same

1992-10-05

1994-05-03

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 50, H01S 318

Patent

active

053094646

ABSTRACT:
A semiconductor laser including a semiconductor substrate, a back reflection layer formed over the semiconductor substrate, a first clad layer formed over the back reflection layer, an active layer formed over the first clad layer, the active layer having a width smaller than that of the first clad layer, and a second clad layer formed over the active layer. The second clad layer has a flat upper surface and a width identical to that of the first clad layer. A front reflection layer is formed over the second clad layer. The semiconductor laser also includes impurity diffusion regions of a first conductivity type and a second conductivity type. The impurity diffusion regions extend from the upper surface of the second clad layer to predetermined depth portions of the first clad layer and are in contact with opposite side portions of the active region, respectively. First and second electrodes adapted to oscillate laser beams are formed over the first and second conductivity type impurity diffusion regions. A third electrode adapted to discharge laser beams and a fourth electrode adapted to discharge laser beams are formed over the front reflection layer and beneath the bottom surface of the semiconductor substrate, respectively.

REFERENCES:
patent: 5007063 (1991-04-01), Kahen
patent: 5146465 (1992-09-01), Khan et al.
Physics of Semiconductor Lasers, Mroziewicz et al., PWN--Polish Scientific Publishers, pp. 198-237.

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