Semiconductor laser and method for manufacturing the same

Details Semiconductor laser and method for manufacturing the same Semiconductor laser and method for manufacturing the same

2004-08-17

2008-05-06

Nguyen, Dung (Michael) T. (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

07369593

ABSTRACT:
The semiconductor laser of the present invention includes a first conductivity-type cladding layer, a second conductivity-type cladding layer having at least one ridge structure extending in the direction of a resonator, an active layer disposed between the two cladding layers and a current blocking layer provided so as to cover at least a side face of the ridge structure. The current blocking layer includes a hydrogenated first dielectric film. In the structure having the current blocking layer formed of a dielectric, a light confining efficiency is enhanced, a threshold value of laser oscillation decreases, and current properties during the oscillation at a high temperature and with a high power are improved.

REFERENCES:
patent: 6345064 (2002-02-01), Fujii
patent: 2002/0195633 (2002-12-01), Nagano et al.
patent: 2006/0011946 (2006-01-01), Toda et al.
patent: 1393931 (2003-01-01), None
patent: 2-54591 (1990-02-01), None
patent: 6-237038 (1994-08-01), None
patent: 11-186650 (1999-07-01), None

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