Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-11-17
2009-06-23
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S037000, C257S021000, C257S059000, C257S079000, C257S072000, C257S103000, C257S099000
Reexamination Certificate
active
07550757
ABSTRACT:
A back-surface-electrode type semiconductor laser of GaN-based compound has low electric resistance and high light emitting efficiency, and includes negative electrodes made of Al having a contact surface that contacts with the n-type GaN substrate. The back-surface-electrode type semiconductor laser has GaN-based compound layers laminated on an n-type GaN substrate with an area of reversal of polarity with low electric resistance and a negative electrode is disposed on the side opposite to the side of GaN-based compound layer of the GaN substrate so as to come in contact with the area of reversal of polarity.
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Kohda Shinichi
Ohta Hiroaki
Dang Phuc T
Keating & Bennett LLP
Rohm & Co., Ltd.
Tran Thanh Y
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