Semiconductor laser and method for fabricating the same

Details Semiconductor laser and method for fabricating the same Semiconductor laser and method for fabricating the same

1995-03-01

1996-10-01

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

H01L 2120

Patent

active

055610803

ABSTRACT:
A semiconductor laser of the invention includes a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof, and a semiconductor multilayer structure formed on the substrate. The stripe groove extends along a <1-10> direction. The semiconductor multilayer structure includes an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a surface of an (all) crystal plane (a>1), the portion being positioned on the stripe groove, a pair of AlGaInP cladding layers provided on the Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1), and an active layer sandwiched between the pair of AlGaInP cladding layers.

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K. Itaya et al., "New Window-Structure In GaA1P Visible Light Laser Diodes by Self-Selective Zn Diffusion-Induced Disordering", IEEE Journal of Quantum Electronics, vol. 27, No. 6, pp. 1496-1500 (Jun.1991).

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