Coherent light generators – Particular active media – Semiconductor
Patent
1996-03-18
1998-12-15
Bovernick, Rodney
Coherent light generators
Particular active media
Semiconductor
257 94, H01S 318
Patent
active
058504109
ABSTRACT:
The present invention relates to a semiconductor laser having light emitting wavelengths from blue to UV, more specifically a semiconductor laser which can form a laser resonator by perpendicular cleavage of the substrate and a method for fabricating the semiconductor laser. The semiconductor laser comprises a single crystal substrate 10 of cubic system, and an epitaxial crystal layer 12 with the laser resonator formed by cleavage planes 30 thereof. Cleavage planes 28 of the single crystal substrate 10 and the cleavage planes 30 of the epitaxial crystal layer 12 are not parallel with each other, and the intersection between the cleavage planes 30 of the epitaxial crystal layer 12 and the surface of the single crystal substrate substantially agrees with the intersection L between the cleavage planes 28 of the single crystal substrate 10 and the surface of the single crystal substrate 10.
REFERENCES:
patent: 4987472 (1991-01-01), Endo et al.
patent: 5608749 (1997-03-01), Kizuki
patent: 5625202 (1997-04-01), Chai
patent: 5701321 (1997-12-01), Hayafuji et al.
Nagatomo et al. Vacuum, Electron and Ion Technologies, "GaN single crystal films on silicon substrates grown by MOVPE", pp. 1069-1070, 1991.
Bovernick Rodney
Fujitsu Limited
Kang Ellen E.
LandOfFree
Semiconductor laser and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1463164