Semiconductor laser and manufacturing process therefor

Details Semiconductor laser and manufacturing process therefor Semiconductor laser and manufacturing process therefor

2005-05-09

2009-10-13

Tran, Minh-Loan T (Department: 2826)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S045011, C372S046010, C372S046012, C372S050110, C372S099000, C359S569000

Reexamination Certificate

active

07602827

ABSTRACT:
There is provided a semiconductor laser comprising an n-InP substrate1; a multilayer film including a strained MQW active layer6on the n-InP substrate1;a p-electrode18on the multilayer film;a pair of grooves15separating the multilayer film in both edges of the p-electrode18and extending to the n-InP substrate1; anda plurality of diffraction gratings formed in an area from one to the other of the pair of grooves15in a diffraction grating forming surface formed in the upper surface of the n-InP substrate1or the upper surface of any of the semiconductor films in the multilayer film.

REFERENCES:
patent: 4902644 (1990-02-01), Wilt
patent: 5982798 (1999-11-01), Okuda
patent: 6493369 (2002-12-01), Funabashi et al.
patent: 6642075 (2003-11-01), Takiguchi
patent: 2002/0003661 (2002-01-01), Nakai
patent: 2002/0061046 (2002-05-01), Takiguchi et al.
patent: 2003/0016448 (2003-01-01), Takasuka et al.
patent: 2004/0156299 (2004-08-01), Sakai et al.
patent: 64-25494 (1989-01-01), None
patent: 7-176829 (1995-07-01), None
patent: 10-22579 (1998-01-01), None
patent: 10-93190 (1998-04-01), None
patent: 11-233893 (1999-08-01), None
patent: 11-354887 (1999-12-01), None
patent: 2000-138413 (2000-05-01), None
patent: 2004-95806 (2004-03-01), None
Kamite et al “Ultra-High Speed InGaAsP/InP DFB Lasers Emitting at 1.3 micrometer Wavelength” IEEE Journal of Quantum Electronics, vol. 6 (1987), 1054-1058.
Kamite et al (“Ultra-High Speed InGAsP/InP DFB Lasers Emitting at 1.3 mm Wavelength” IEEE Journal of Quantum Electronics, vol. 6, Jun. 1987).
Kiyotsugu Kamite, et al., “Ultra-High Speed InGaAsP/InP DFB Lasers Emitting at 1.3 um Wavelength”, IEEE Journal of Quantum Electronics, 1987, vol. QE-23, No. 6, pp. 1054-1058.
A. Valster, et al., “Improved High-Frequency Response of InGaAsP Double-Channel Buried-Heterostructure Lasers”, Electronics Letters, 1996, vol. 22, No. 1, pp. 17-18.
Bo Lu, et al., “High-speed low-parasitic low-divergence 635nm singlemode lasers”, Electronics Letters, 1998, vol. 34, No. 18, pp. 1750-1751.
Chinese Office Action dated Feb. 16, 2007 and English translation.
Japanese Office Action dated Nov. 18, 2008, with partial English translation.
Japanese Office Action dated Jun. 30, 2009 and partial English translation thereof.

Affiliated with

Also associated with

Rating

Semiconductor laser and manufacturing process therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser and manufacturing process therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser and manufacturing process therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4124244