Semiconductor laser and manufacturing method thereof

Details Semiconductor laser and manufacturing method thereof Semiconductor laser and manufacturing method thereof

2005-07-05

2005-07-05

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046012

Reexamination Certificate

active

06914923

ABSTRACT:
A semiconductor laser includes a substrate, a double hetero structure portion formed on the substrate, the double hetero structure including a first clad layer formed on the substrate, an active layer formed on the first clad layer and a second clad layer formed on the active layer, the second clad layer having a stripe-form projection on an upper surface thereof, the projection having an upper portion whose sidewalls are substantially vertically formed on the surface of the substrate and a step-shaped lower portion whose line width is larger than that of the upper portion, and a current blocking layer formed extending from side surfaces of the projection to the upper surface of the second clad layer except an upper surface of the projection.

REFERENCES:
patent: 6522676 (2003-02-01), Goto et al.
patent: 2000286504 (2000-10-01), None
patent: 2001-274513 (2001-10-01), None

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