Semiconductor laser and manufacturing method therefor

Details Semiconductor laser and manufacturing method therefor Semiconductor laser and manufacturing method therefor

1999-11-05

2000-10-10

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

H01L 2100

Patent

active

061301086

ABSTRACT:
Fabrication of a semiconductor laser having a double hetero junction structure including: an active layer; cladding layers including an upper layer and a lower layer, the cladding layers sandwiching the active layer; and a current blocking layer including a stripe recess for acting as a current passage. The current blocking layer is provided within at least one of the cladding layers. The current blocking layer includes a plurality of layers, at least one layer of the layers having a slit therein extending transversely to the stripe recess.

REFERENCES:
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patent: 4890293 (1989-12-01), Taneya et al.
patent: 4984243 (1991-01-01), Kagawa et al.
patent: 5210767 (1993-05-01), Arimoto et al.
patent: 5218613 (1993-06-01), Serreze
patent: 5303255 (1994-04-01), Kudo et al.
Abstract of Japanese Patent Publ. No. 02-129915, dated May 7, 1992.

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