Semiconductor laser and manufacturing method therefor

Details Semiconductor laser and manufacturing method therefor Semiconductor laser and manufacturing method therefor

1993-06-01

1995-02-21

Epps, Georgia Y.

Coherent light generators

Particular temperature control

Heat sink

372 45, 372 46, 369122, H01S 304

Patent

active

053923049

ABSTRACT:
A semiconductor laser adaptable for a 3-beam method, including a semiconductor laser chip bonded on a primary plane of a flat submount, the semiconductor laser chip having a thickness of 30 to 80 .mu.m is provided. Also provided is a method for manufacturing a semiconductor laser including the steps of: sequentially stacking layers of compound semiconductor materials on a semiconductor substrate to form a semiconductor laser wafer; mechanically abrading the semiconductor substrate to make it thin; subjecting the mechanically abraded face of the semiconductor substrate to a chemical treatment; forming an electrode film on both sides of the semiconductor laser wafer thus treated; and cutting the semiconductor laser wafer into chips and bonding each of the chips on a submount.

REFERENCES:
patent: 4748482 (1988-05-01), Collins
patent: 4757510 (1988-07-01), Kaneno et al.
patent: 4974231 (1990-11-01), Gomyo
patent: 4987566 (1991-01-01), Shikama et al.
patent: 5146467 (1992-09-01), Kadowaki et al.

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