Fishing – trapping – and vermin destroying
Patent
1991-05-03
1992-04-28
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437133, 437167, H01L 2120, H01L 21205, H01L 21208
Patent
active
051089491
ABSTRACT:
A planar type semiconductor laser having p-side and n-side electrodes on the same side of the substrate. The substrate carries a number of layers including lower and upper cladding layers sandwiching an active layer. Both of the cladding layers are of n-type material. A pair of p-type diffusion regions serve to define the width of an undisordered active stripe in the active layer. A first relatively deep diffusion region penetrates both cladding layers and extends into the substrate. A second shallower diffusion region spaced, from the first, penetrates only to the lower cladding layer and leaves a channel below the diffusion front in the lower cladding layer for conduction of carriers. The distance between the p-type diffusion regions defines the width of the active layer. An n-side electrode is formed on the upper surface of the semiconductor device and in electrical contact with the n-type cladding layers. A p-side electrode is formed on the upper surface of the semiconductor layer in electrical contact with the first p-type diffusion region.
REFERENCES:
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 4716125 (1987-12-01), Makiuchi
patent: 4873696 (1989-10-01), Coldren et al.
patent: 4888781 (1989-12-01), Omura et al.
patent: 4937835 (1990-06-01), Omura
"AlGaAs MQW Laser With Electrodes on Epi-Layer", by Hirose et al., 18a-ZR-9, Prescripts of Autumn Meeting, 1987, Japanese Association of Applied Physics.
"AlGaAs/GaAs Lateral Current Injection MQW Laser", by Makiuchi et al., Conference on Lasers and Electro-Optics, 1987.
Chaudhuri Olik
Mitsubishi Denki & Kabushiki Kaisha
Ojan Ourmazd S.
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