Semiconductor laser and electronic device

Details Semiconductor laser and electronic device Semiconductor laser and electronic device

2007-10-15

2009-11-17

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S092000

Reexamination Certificate

active

07620086

ABSTRACT:
In one embodiment of the invention, in a semiconductor laser in which a first conductivity type lower cladding layer, an active layer that includes a quantum well layer, and a second conductivity type upper cladding layer are formed in this order on a semiconductor substrate, a dopant concentration of the lower cladding layer is not more than 4.0×1017/cm3, and a resonator length is not less than 1500 μm.

REFERENCES:
patent: 2002/0037022 (2002-03-01), Fukagai
patent: 2003-124569 (2003-04-01), None
patent: 2005-101440 (2005-04-01), None
patent: 2006-128405 (2006-05-01), None

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