Semiconductor laser and a method for producing the same

Details Semiconductor laser and a method for producing the same Semiconductor laser and a method for producing the same

1999-07-09

2000-10-31

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 39, H01L 2120

Patent

active

061401420

ABSTRACT:
A semiconductor laser device according to the present invention includes: a semiconductor substrate having a first conductivity type; and a semiconductor multilayer structure provided on the semiconductor substrate, the semiconductor multilayer structure including an active layer. The semiconductor multilayer structure includes: a lower cladding layer provided below the active layer, the lower cladding layer having the first conductivity type; an upper cladding structure provided above the active layer, the upper cladding structure having a second conductivity type; and a cap layer provided above the upper cladding structure. A ridge is formed in the upper cladding structure, and a width of a lower face of the cap layer is larger than a width of an upper face of the ridge.

REFERENCES:
patent: 5029175 (1991-07-01), Ohnaka et al.
patent: 5297158 (1994-03-01), Naitou et al.
patent: 5316967 (1994-05-01), Kaneno et al.
patent: 5400354 (1995-03-01), Ludowise et al.
patent: 5426658 (1995-06-01), Kaneno et al.
patent: 5636234 (1997-06-01), Tada et al.
Patent Abstracts of Japan, vol. 015, No. 280 (E-1090), Jul. 16, 1991, & JP 03 097286 A (Mitsubishi Electric Corp.), Apr. 23, 1991.

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