Semiconductor laser and a method for producing the same

Details Semiconductor laser and a method for producing the same Semiconductor laser and a method for producing the same

1993-07-15

1995-01-17

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 437129, H01S 319

Patent

active

053832140

ABSTRACT:
A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.

REFERENCES:
patent: 4959839 (1990-09-01), Yamamoto
H. Fujii et al. "High-Powered Operation of a Transverse-mode Stabilised AlGaInP Visible Light (.lambda..sub.I =683 nm) Semiconductor Laser", Electronics Letters, vol. 23, No. 18, Aug. 27, 1987, pp. 938-939.
I. Kidoguchi et al., "Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral leaky waveguide structure", Appl. Phys. Lett.62(21), May 24, 1993, pp. 2602-2604.
I. Kidoguchi et al., "AlGaInP Visible Laser Diode with Extremely High Quantum Efficiency Having Lateral Leaky Waveguide Structure", International Electron Devices meeting, San Francisco, Calif., Dec. 13-16, 1992, pp. 34.5.1-34.5.4.

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