Coherent light generators – Particular active media – Semiconductor
Patent
1997-01-17
1999-09-21
Bovernick, Rodney
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
059563613
ABSTRACT:
A semiconductor laser device according to the present invention includes: a semiconductor substrate having a first conductivity type; and a semiconductor multilayer structure provided on the semiconductor substrate, the semiconductor multilayer structure including an active layer. The semiconductor multilayer structure includes: a lower cladding layer provided below the active layer, the lower cladding layer having the first conductivity type, an upper cladding structure provided above the active layer, the upper cladding structure having a second conductivity type; and a cap layer provided above the upper cladding structure. A ridge is formed in the upper cladding structure, and a width of a lower face of the cap layer is larger than a width of an upper face of the ridge.
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patent: 5636236 (1997-06-01), Tada et al.
Patent Abstracts of Japan, vol. 015, No. 280 (E-1090), Jul. 16, 1991, & JP 03 097286 A (Mitsubishi Electric Corp.), Apr. 23, 1991.
Ikeda Hiroaki
Ohbayashi Ken
Bovernick Rodney
Sharp Kabushiki Kaisha
Song Yisun
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