Semiconductor laser amplifier

Optical: systems and elements – Optical amplifier – Particular active medium

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372 45, H01S 319

Patent

active

052298795

ABSTRACT:
A semiconductor laser amplifier according to this invention has an optical waveguide layer containing a p-type semiconductor layer in an n-type semiconductor substrate. On one end of the n-type semiconductor substrate, for example, a reflective film is formed as light-reflecting means. In this invention, two optical waveguide layers are arranged so as to form a V with these two layers meeting each other at one end, on which the reflective film is formed, of the substrate.

REFERENCES:
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patent: 4910571 (1990-03-01), Kasahara et al.
patent: 5019787 (1991-05-01), Carlson et al.
Patent Abstracts of Japan--vol. 13, No. 16 (E-703)(3364) Jan. 13, 1989 & JP-A-63221692.
Patent Abstracts of Japan--vol. 6, No. 95 (E-110) Jun. 3, 1982 & JP-A-57028392.
Patent Abstracts of Japan--vol. 12, No. 12 (P-655) Jan. 14, 1988 & JP-A-62170918.
Patent Abstracts of Japan--vol. 9, No. 298 (E-361)(2021) Nov. 26, 1985 & JP-A-60136387.

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