Semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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372 46, H01S 319

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active

056404093

ABSTRACT:
A semiconductor light-emitting device capable of emitting blue to green light is disclosed. The device comprises a first cladding layer of the first conduction type stacked on a compound semiconductor substrate and made of ZnMgSSe compound semiconductor; an active layer stacked on the first cladding layer; a second cladding layer of the second conduction type stacked on the active layer and made of a ZnMgSSe compound semiconductor; and ZnSSe compound semiconductor layers provided on the second cladding layer and/or between the compound semiconductor substrate and the first cladding layer. The device has good optical confinement characteristics and carrier confinement characteristics, generates only a small amount of heat during its operation, and is fabricated easily.

REFERENCES:
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patent: 5371756 (1994-12-01), Fujii
patent: 5373521 (1994-12-01), Takahashi
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Patent Abstracts of Japan, "Semiconductor Device" F. Shigeo, vol. 17, No. 57, 4 Feb. 1993.
Electronics Letters, "Room Temperature Pulsed Operation of 498nm Laser with ZnMgSSe Cladding Layers", S. Itoh et al., vol. 29, No. 9 29 Apr. 1993, pp. 766-768.
Electronics Letters, "Ohmic Contacts to p-type ZnSe Using ZnTe/ZnSe Multiquantum Wells", F. Hiei, et al., vol. 29, No. 10, 13 May 1993, pp. 878-879.
Applied Physics Letters, "Blue-green Injection Lasers Containing Pseudomorphic Zn.sub.1-x Mg.sub.x MgxS.sub.y Se.sub.10y Cladding Layers and Operting up to 394 K", J.M. Gaies, vol. 62, No. 20, 17 May 1993, pp. 2462-2464.

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