Semiconductor laser

Details Semiconductor laser Semiconductor laser

1992-08-21

1994-05-03

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

053094662

ABSTRACT:
In a semiconductor laser, an active layer includes a semiconductor layer having the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction. By the action of the ordered structure, the electric vector of the recombination light generated in the active layer is concentrated in the (-1,1,1) plane or the (1,-1,1) plane. Alternatively, the semiconductor layer has not only the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction, but also the compressive strain in the (0,0,1) plane. By the action of the ordered structure and the compressive strain, the recombination light generated in the active layer is emitted in the (1,1,0) plane. As a result, the recombination light effectively gives a gain to the oscillation mode. Thus, the oscillation threshold current of the semiconductor laser is reduced, and the laser characteristics is improved.

REFERENCES:
patent: 4894836 (1990-01-01), Hayakawa et al.
patent: 4901326 (1990-02-01), Hayakawa et al.
patent: 4974231 (1990-11-01), Gomyo
patent: 5016252 (1991-05-01), Hamada et al.
Applied Physics Letters, vol. 61, No. 7, 17 Aug. 1992, pp. 737-739, H. Fuji et al. "Observation of stripe-direction dependence of threshold current density for AlGaInP laser diodes with CuPt-type natural superlattice in Ga0.5In0.5P active layer."

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