Semiconductor laser

Details Semiconductor laser Semiconductor laser

1986-12-15

1989-01-10

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, 372 50, 372 97, H01S 319

Patent

active

047978910

ABSTRACT:
The present invention relates to phased-array semiconductor lasers having a radiation angle turnable by oscillating independently and stably between the fundamental supermode and the higher order supermode and switching the radiation angles by utilizing the property that their radiation angles are different.
Optical switching and optical scanning, that have been difficult in the prior art, can be made more easily by use of a semiconductor laser having a turnable radiation angle.
The objection of the present invention can be accomplished by disposing separate electrodes at the emission stripes and at the gap between the stripes in the phased-array semiconductor laser.
Further, the present invention may be accomplished by dividing at least one stripe electrode in order to form electrode regions. When the current is applied to all the electrodes, oscillation occurs in the highest order mode and the beam is emitted in another direction. When the current is applied to only the electrode exclusive of the electrode regions, oscillation occurs in the fundamental mode and the beam is emitted in a direction vertical to a facet.
Moreover, the present invention may be accomplished by disposing electrodes outside the stripe regions of the phased-array semiconductor laser so that oscillation occurs in the fundamental supermode when the electric field is applied to the electrodes and in the higher order mode when the electric field is not applied.

REFERENCES:
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4445218 (1984-04-01), Coldren
patent: 4674096 (1987-06-01), Salzman et al.
IEEE Communications Magazine, vol. 21, No. 6, Sep. 1983, pp. 20-27 IEEE, New York, US: "Semiconductor Optoelectronic Devices for Free-Space Optical Communications".
Optics Letters, vol. 10, No. 4, Apr. 1984, pp. 125-127, Optical Society of America, New York, E. Kapon et al., "Supermode Analysis of Phase-Locked Arrays of Semiconductor Lasers".
IEEE Journal of Quantum Electronics, vol. QE-17, No. 5, May 1981, pp. 718-722, IEEE, New York, K. A. Shore et al., "Near-Field Control in Multistripe Geometry Injection Lasers".
Applied Physics Letters, vol. 33, No. 8, Oct. 15, 1978, pp. 702-704, American Institute of Physics, New York, D. R. Scrifres et al. "Beam Scanning with Twin-Stripe Injection Lasers".
Applied Physics Letters, vol. 41, No. 11, Dec. 1982, pp. 1030-1032, American Institute of Physics, New York; D. R. Scifres et al., "Continuous Wave High-Power, High-Temperature Semiconductor Laser Phase-Locked Arrays".

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