Semiconductor laser

Details Semiconductor laser Semiconductor laser

1991-09-16

1992-11-03

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

051611660

ABSTRACT:
A double heterojunction semiconductor laser according to the invention includes first and third cladding layers sandwiching an active layer. The third cladding layer includes a mesa opposite a light emitting region of the active layer. The mesa is confined by a current blocking layer. A cap layer that is part of the mesa is used as a dopant diffusion source to dope a light emitting region of the active layer heavily. A second cladding layer may be present between the active layer and third cladding layer having the same conductivity type as the third cladding layer adjacent the light emitting region but the opposite conductivity type elsewhere. A semiconductor laser according to the invention may also include a stripe groove structure. The semiconductor lasers include pnpn structures outside the light emitting region and in window structures adjacent the facets of the semiconductor laser for suppressing leakage currents, thereby increasing laser efficiency and reducing threshold current while increasing power output.

REFERENCES:
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patent: 4926431 (1990-05-01), Kawanishi et al.
patent: 4961197 (1990-10-01), Tanaka et al.
Yonezu et al., "An AlGaAs Window Structure Laser", IEEE, Journal of Quantum Electronics, vol. QE-15, Aug. 1979, pp. 775-781.
Yang et al., "High-Power Operation . . . (ICPS) Lasers", Electronics Letters, vol. 21, No. 17, 1985, pp. 751-752.
Mawst et al., "Complementary . . . Vapour Deposition", Electronics Letters, vol. 21, No. 20, pp. 903-905, Sep. 1985.

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