Semiconductor laser

Details Semiconductor laser Semiconductor laser

1992-02-21

1993-12-07

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

257 13, H01S 319

Patent

active

052689182

ABSTRACT:
A double heterojunction II-VI group compound semiconductor laser has a substrate of GaAs or Gap, a first cladding layer, an active layer, and a second cladding layer which are successively deposited on the substrate by way of epitaxial growth. One or both of the first and second cladding layers have a composition of ZnMgSSe.

REFERENCES:
patent: 5008891 (1991-04-01), Morita
patent: 5010376 (1991-04-01), Nishimura et al.
patent: 5045897 (1991-09-01), Ahlyren
Okuyama et al, "Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy", Japanese Journal of Applied Physics, vol. 30, No. 9B, Sep. 1991, pp. L 1620-L 1623.
Okuyama et al, "ZnSe/ZnMgSSe Blue Laser Diode", Electronics Letters, vol. 28, No. 19, Sep. 10, 1992, pp. 1798-1799.

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