Semiconductor laser

Oscillators – Molecular or particle resonant type

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

331 945P, 357 18, 357 56, 357 81, H01S 319

Patent

active

041617010

ABSTRACT:
A semiconductor layer for supporting a diode chip of a semiconductor laser is formed to be higher than a semiconductor layer containing a current-conducting region, whereby stresses acting on the diode chip by mounting the diode chip are relieved to prevent degradation of performance and reduced life of the semiconductor laser.

REFERENCES:
patent: 3753053 (1973-08-01), Swartz
patent: 3896473 (1975-07-01), DiLorenzo et al.
patent: 3903592 (1975-09-01), Heckl
patent: 4021839 (1977-05-01), Denlinger

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-319160

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.