Coherent light generators – Particular active media – Semiconductor
Patent
1995-08-28
1996-09-24
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
055598218
ABSTRACT:
A superlattice layer is introduced in the ridge stripe structure of a buried ridge type semiconductor laser. This superlattice layer captures and redirects the propagation of a dislocation which occurs due to a shearing stress created in the crystalline structure during either an epitaxial growth or a cooling process following the epitaxial growth. This superlative layer eliminates the possibility of a through dislocation penetrating the laser active region under the ridge stripe structure so that optical loss along a waveguide can be avoided. Consequently, a semiconductor laser with a long lifetime and superior characteristics is obtained.
REFERENCES:
patent: 5408487 (1995-04-01), Uchida et al.
Matsumoto et al, "High-Power Self-Sustained 780nm Low-Noise Semiconductor Laser Diodes", Japan Society of Applied Physics . . . Extended Abstracts, 1994, p. 24p-K-8 (No Month).
Goto et al, "Low-Noise And High-Power GaAlAs Lasers With A Saturatable Absorbing Layer", Japan Society of Applied Physics . . . Extended Abstracts, 1994, p. 28p-K-9 (No Month).
Yagi et al, "Inverted Inner Stripe Laser With A p-GaAs Buffer Layer Grown By MOCVD", 20th Conference on Solid State Devices and Materials, Extended Abstracts, 1988, pp. 303-306 (No Month).
Davie James W.
Mitsubishi Denki & Kabushiki Kaisha
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