Semiconductor laser

Details Semiconductor laser Semiconductor laser

1985-04-23

1988-12-20

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, H01S 319

Patent

active

047929600

ABSTRACT:
A semiconductor laser comprising a substrate for crystal growth having a striped channel, an active layer for laser oscillation, a cladding layer containing Mg which is in contact with said active layer at the side of said striped channel substrate.

REFERENCES:
patent: 4545057 (1985-10-01), Hayakawa et al.
patent: 4589115 (1987-05-01), Barnham et al.
S. Yamamoto et al, "680 nm CW Operation at Room Temperature by AlGaAs Double Heterojunction Lasers", IEEE Journal of Quantum Electronics, vol. QE-19, No. 6, Jun. 1983, pp. 1009-1015.
Patent Abstracts of Japan, vol. 7, No. 226 (E-202), Oct. 7, 1983, No. 58-115877 of T. Hayakawa.
S. Yamamoto et al, "Room-Temperature CW Operation in the Visible Spectral Range of 680-700 nm by AlGaAs Double Heterojunction Lasers", Applied Physics Letters, vol. 41, No. 9, Nov. 1982, pp. 796-798.
Patent Abstracts of Japan, vol. 6, No. 111 (E-114), Jun. 22nd, 1982, No. 57-42184 of M. Yano.

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