Semiconductor laser

Details Semiconductor laser Semiconductor laser

1989-01-31

1989-12-19

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 4, 372 45, H01S 319

Patent

active

048887811

ABSTRACT:
A buried heterojunction semiconductor laser appropriate for integration with other electronic circuitry and method of producing same, in which the width of a central stripe of the active region can be reduced beyond the physical size limitations of the connecting electrode so as to allow the semiconductor laser to oscillate in a stable manner and with low threshold current. The semiconductor laser is provided with a portion of the surface of the upper cladding layer located above the disordered active layer regions electrically connected with the upper cladding layer located above the nondisordered central stripe. As a result, the central stripe electrode can be of a width larger than that of the central stripe itself.

REFERENCES:
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 4630083 (1986-12-01), Yamakoshi
patent: 4644553 (1987-02-01), Van Ruyven et al.
patent: 4752934 (1988-06-01), Fukuzawa et al.
patent: 4827483 (1989-05-01), Fukuzawa et al.
"AlGaAs MQW Laser With Electrodes on Epi-Layer", by Hirose et al., 18a-ZR-9 Prescripts of Autumn Meeting, 1987, Japanese Association of Applied Physics.
"AlGaAs/GaAs Lateral Current Injection MQW Laser", by Makiuchi et al. Conference on Lasers and Electro-Optics, 1987.

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