Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-02-06

1998-02-24

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, 257748, H01S 319

Patent

active

057217513

ABSTRACT:
A semiconductor laser includes (a) a semiconductor substrate of a first conductivity type on which is provided (b) a mesa stripe portion having a multilayer structure. The multilayer structure includes (b-1) an active layer provided on the semiconductor substrate. The laser also includes (c) a buried current blocking layer arranged on both sides of the mesa stripe portion, (d) a clad layer of a second conductivity type provided on the semiconductor substrate through at least a portion of the active layer, and (e) a contact layer of the second conductivity type provided on the clad layer. The contact layer includes a first contact layer contacting the clad layer and a second contact layer provided on the first contact layer. The first contact layer has an energy gap smaller than that of the clad layer and larger than that of the second contact layer. Preferably, the first contact layer is an InGaAsP semiconductor layer having an energy gap within the range of from 0.82 eV to 1.12 eV, the second contact layer is selected from the group consisting of an InGaAs semiconductor layer and an InGaAsP semiconductor layer which has an energy gap of 0.8 eV, and the clad layer contacting the first contact layer is an InP layer.

REFERENCES:
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patent: 4949349 (1990-08-01), Ohba et al.
Agrawal and Dutta, Semiconductor Lasers, Van Nostrand Reinhold, New York, pp. 201-202, 1993.
"Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1.3-.mu.m planar buried heterostructure lasers", T. Kawabata et al; J. Appl. Phys. 64(7), pp. 3684-3688, Oct. 1, 1988.
"Low Threshold Operation of 1.5 .mu.m Buried-Heterostructure DBF Lasers Grown Entirely By Low-Pressure MOVPE", Electronics Letters, Feb. 26, 1987, vol. 23 No. 5, pp. 193-194.
"MOVPE Regrowth of Semi-Insulating InP Around Reactive Ion Laser Mesas", Electronics Letters, May 23, 1991, vol. 27 No. 11, pp. 926-927.
"25 GHz Bandwidth 1.55 .mu.m GainAsP p-Doped Strained Multiquantum-Well Lasers", P.A. Morton, et al; Electronics Letters, Nov. 5, 1992, vol. 28 No. 23, pp. 2156-2157.

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